An Experimental Study on GaAs Photocathode with Electronic Multiplier

HU Cang-lu; GUO Hui; JIAO Gang-cheng; Peng Cha-xia; FENG Chi; XU Xiao-bing; ZHOU Yu-jian; CHENG Wei; WANG Shu-fei

doi:10.3969/j.issn.0372-2112.2013.08.015

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An Experimental Study on GaAs Photocathode with Electronic Multiplier

更新时间：2025-07-16

- An Experimental Study on GaAs Photocathode with Electronic Multiplier
- Acta Electronica Sinica Vol. 41, Issue 8, Pages: 1549-1554(2013)
- 作者机构：
  
  1. 微光夜视技术重点实验室,陕西,西安,710065
  2. 北方夜视科技集团有限公司,云南,昆明,650223
  3. 西北工业大学材料学院, 凝固技术国家重点实验室,陕西,西安,710072
  6. 西北工业大学材料学院凝固技术国家重点实验室,陕西,西安,710072
- 作者简介：
- 基金信息：
- DOI：10.3969/j.issn.0372-2112.2013.08.015
  CLC： TN21
- Published：2013
- 稿件说明：
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HU Cang-lu, GUO Hui, JIAO Gang-cheng, et al. An Experimental Study on GaAs Photocathode with Electronic Multiplier[J]. Acta Electronica Sinica, 2013, 41(8): 1549-1554.
DOI：

HU Cang-lu, GUO Hui, JIAO Gang-cheng, et al. An Experimental Study on GaAs Photocathode with Electronic Multiplier[J]. Acta Electronica Sinica, 2013, 41(8): 1549-1554. DOI： 10.3969/j.issn.0372-2112.2013.08.015.

摘要

电子倍增型GaAs光阴极是利用雪崩倍增效应的一种新型光阴极组件

通过在常规GaAs光阴极中引入雪崩电子倍增层制备了GaAs光阴极/电子倍增器一体化组件

研究了该组件的热清洗温度、电子增益等性能.对组件热清洗工艺前后的

I-V

特性进行了对比测试

结果表明

该组件可以承受580℃的热清洗温度

并获得了12.6倍的电子增益;880nm处的探测灵敏度3.87mA/w;暗电流密度6.7910

-5

mA/cm

Abstract

GaAs photocathode with avalanche electron multiplier is a new type photocathode and fabricated by adding the avalanche electron multiplication layer in typical GaAs photocathode

the hot clean temperature、electron gain and other performance of the photocathode component are investigated.The I-V characteristic of the photocathode component after and before hot cleaning was measured and analyzed.The experimental results were shown that photocathode component can endure 580℃ hot cleaning temperature and got electron gain 12.6

the radiation sensitivity is greater or equal to 3.87mA/w at 880nm of wave length

the dark current density is less than or equal to 6.7910

-5

mA/cm

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Related Author

TIAN Guo-ping

WANG Li

ZHU Si-cheng

Related Institution

The National Key Laboratory of ASIC, the 13th Research Institute of China Electronics Technology Group Corporation

Information Center of China Defense Science and Technology

The National Key Laboratory of ASIC the 13th Research Institute of China Electronics Technology Group CorporationShijiazhuang Hebei

Information Center of China Defense Science and TechnologyBeijing 100036China

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