Electron Multiplication Model of EMCCD in Low Temperature

HU Po; LI Bin-hua

doi:10.3969/j.issn.0372-2112.2013.09.025

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Electron Multiplication Model of EMCCD in Low Temperature

更新时间：2025-07-16

- Electron Multiplication Model of EMCCD in Low Temperature
- Acta Electronica Sinica Vol. 41, Issue 9, Pages: 1826-1830(2013)
- 作者机构：
  
  昆明理工大学信息工程与自动化学院,云南,昆明,650500
- 作者简介：
- 基金信息：
  
  Joint Researcg Fund in Astronomy of the National Natural Science Foundation of China and the Chinese Academy of Sciences (No.10978013)
- DOI：10.3969/j.issn.0372-2112.2013.09.025
  CLC： TN29
- Published：2013
- 稿件说明：
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HU Po, LI Bin-hua. Electron Multiplication Model of EMCCD in Low Temperature[J]. Acta Electronica Sinica, 2013, 41(9): 1826-1830.
DOI：

HU Po, LI Bin-hua. Electron Multiplication Model of EMCCD in Low Temperature[J]. Acta Electronica Sinica, 2013, 41(9): 1826-1830. DOI： 10.3969/j.issn.0372-2112.2013.09.025.

摘要

了研究低温下电子倍增CCD(EMCCD)的电荷倍增特性

根据电子碰撞电离原理

建立了电离率模型;并依据雪崩倍增积分关系

针对所分析的EMCCD器件

建立了其低场强的倍增模型.通过倍增模型的理论计算结果与TI公司提供的实际器件TC285SPD和TC253SPD的倍增曲线比较

说明所提出模型的数据能够很好地拟合实际的倍增曲线.该模型可以方便地计算在固定栅极电压下的电子信号通过多级级联电子倍增寄存器后的总增益

进而可用于EMCCD相机的增益调整和校正.

Abstract

To study the charge multiplying characteristic of an electron multiplying charge-coupled device(EMCCD)

an ionization rate model is presented based on the impact-ionization theory.Aiming at two TI IMPACTRON EMCCD devices

we develop a multiplication model at low fields using avalanche multiplication integral formula.Compared with the multiplication curves on the datasheets of both devices of TC285SPD and TC253SPD

the calculated data from the model are taken as a reasonable fit to the actual curves.A method is put forward to predict the amounts of signal passing through the multi-stage cascaded electron multiplication register containing a fixed-voltage gate

which is useful to adjust and correct the gain of EMCCD devices.The model is suitable for lower temperature environment

in which electron-multiplication technology can be applied to photon counting strategies.

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