A high voltage BCD(Bipolar-CMOS-DMOS)technology by using self-extracted JTE(Junction Termination Extension)trench isolation based on 0.35μm standard CMOS(Complementary Metal Oxide Semiconductor)process has been developed for LCD(Liquid Crystal Display)backlight application.In this technology

HV(High Voltage)circuit block

including low cost VDNMOS(Vertical Double Diffused N-MOS)and LDPMOS(Laterally Diffused P-MOS)with resurf principle

and LV(Low Voltage)block are integrated together.Advanced deep trench isolation technology which has higher integration than conventional P-type isolation is firstly implemented to protect LV block from HV block and sustain the d

v

/d

t

d

i

/d

t

effect with self-extracted function.The breakdown voltage is above 150V.Finally

it is shown that the performance of designed IC driver can satisfy the EL(Electroluminescent Lamps)lamp application with frequency at least 400Hz of the switch signal and the power supply is about 100V.For the simplicity of the silicon technology

the cost is saved.