Design and Analysis of a Novel Ultra-Broadband Millimeter Wave Mixer in 0.18-μm CMOS Technology

YU Zhen-xing; FENG Jun

doi:10.3969/j.issn.0372-2112.2015.02.031

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Design and Analysis of a Novel Ultra-Broadband Millimeter Wave Mixer in 0.18-μm CMOS Technology

更新时间：2025-07-16

- Design and Analysis of a Novel Ultra-Broadband Millimeter Wave Mixer in 0.18-μm CMOS Technology
- Acta Electronica Sinica Vol. 43, Issue 2, Pages: 405-411(2015)
- 作者机构：
  
  东南大学射频与光电集成电路研究所,江苏,南京,210096
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China (No.2010CB327404)
- DOI：10.3969/j.issn.0372-2112.2015.02.031
  CLC： TN432
- Published：2015
- 稿件说明：
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YU Zhen-xing, FENG Jun. Design and Analysis of a Novel Ultra-Broadband Millimeter Wave Mixer in 0.18-μm CMOS Technology[J]. Acta Electronica Sinica, 2015, 43(2): 405-411.
DOI：

YU Zhen-xing, FENG Jun. Design and Analysis of a Novel Ultra-Broadband Millimeter Wave Mixer in 0.18-μm CMOS Technology[J]. Acta Electronica Sinica, 2015, 43(2): 405-411. DOI： 10.3969/j.issn.0372-2112.2015.02.031.

摘要

本文提出了一种超宽频带毫米波混频器电路.混频器采用分布式拓扑结构和中频功率合成技术

具有宽带宽和高转换增益.该混频器采用TSMC 0.18-m CMOS工艺设计并制造

芯片总面积为1.67mm

.测试结果表明:混频器工作频率从8GHz到40GHz

中频频率为2.5GHz时的转换增益为-0.2dB至4dB

其本振到中频端口和射频到中频端口间的隔离度均大于50dB.整个电路的直流功耗小于32mW.

Abstract

An ultra-broadband millimeter wave mixer using 0.18-m CMOS process is presented in this paper.To achieve better operation bandwidth

a uniform distributed topology is utilized for wideband matching.To enhance the conversion gain of the mixer

an IF power combining amplifier is proposed and implemented in this mixer design.The mixer achieves a wide measured conversion gain of -0.2dB4dB from 8 to 40GHz.With the low-pass filter

the mixer exhibits excellent LO-to-IF and RF-to-IF isolation which are both better than 50dB.The DC power consumption of the IF amplifier is less than 32mW.

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Related Author

Ge Junxiang

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Dept.of Electronic Engineering,Beijing University of Aeronautics and Astronautics

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