Ku Band Power Amplifier MMIC Based on GaN HEMT Technology

YU Xu-ming; HONG Wei; WANG Wei-bo; ZHANG Bin

doi:10.3969/j.issn.0372-2112.2015.09.026

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Ku Band Power Amplifier MMIC Based on GaN HEMT Technology

更新时间：2025-07-16

- Ku Band Power Amplifier MMIC Based on GaN HEMT Technology
- Acta Electronica Sinica Vol. 43, Issue 9, Pages: 1859-1863(2015)
- 作者机构：
  
  1. 东南大学毫米波国家重点实验室,江苏,南京,210096
  2. 单片集成电路与模块国家重点实验室,江苏,南京,210016
  3. 东南大学毫米波国家重点实验室,江苏,南京,210096
  4. 单片集成电路与模块国家重点实验室,江苏,南京,210016
- 作者简介：
- 基金信息：
- DOI：10.3969/j.issn.0372-2112.2015.09.026
  CLC： TN911.23
- Published：2015
- 稿件说明：
移动端阅览
YU Xu-ming, HONG Wei, WANG Wei-bo, et al. Ku Band Power Amplifier MMIC Based on GaN HEMT Technology[J]. Acta Electronica Sinica, 2015, 43(9): 1859-1863.
DOI：

YU Xu-ming, HONG Wei, WANG Wei-bo, et al. Ku Band Power Amplifier MMIC Based on GaN HEMT Technology[J]. Acta Electronica Sinica, 2015, 43(9): 1859-1863. DOI： 10.3969/j.issn.0372-2112.2015.09.026.

摘要

基于0.25m栅长GaN HEMT工艺

采用三级放大拓扑结构设计了一款Ku波段GaN功率放大器.放大器设计从建立大信号模型出发

输出匹配网络和级间匹配网络均采用电抗匹配减小电路的损耗

从而提高整体放大器的功率效率.测试结果表明

该放大器在14.6~18GHz频带内

小信号增益30dB

脉冲饱和输出功率达15W

功率附加效率(PAE)大于32%;在14.8GHz频点处

放大器的峰值功率达19.5W

PAE达39%.该结果表明GaN MMIC具有高频高功率高效率的优势

具有广阔的应用前景.

Abstract

A three stage Ku band GaN power amplifier MMIC was developed with 0.25 m GaN HEMT technology.The MMIC was designed in micro-strip technology.Based on the large signal model

the amplifier adopted reactance matching network to reduce the insertion loss of the output stage

which improved its associated efficiency.The measurement results exhibited that this amplifier provided a flat small signal gain of 30dB and a pulsed saturated output power of 15W at the drain voltage of 28V over the 14.6~18GHz frequency range.At 14.8 GHz

a peak output power of 19.5W with power added efficiency of 39% was achieved.

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Related Institution

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