The Degradation Mechanism for 1.2kV SiC MOSFET Under Unclamped Repetitive Stress

HUANG Yu; LIU Si-yang; GU Chun-de; MA Rong-jing; SUN Wei-feng

doi:10.3969/j.issn.0372-2112.2016.01.019

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The Degradation Mechanism for 1.2kV SiC MOSFET Under Unclamped Repetitive Stress

更新时间：2025-07-16

- The Degradation Mechanism for 1.2kV SiC MOSFET Under Unclamped Repetitive Stress
- Acta Electronica Sinica Vol. 44, Issue 1, Pages: 130-134(2016)
- 作者机构：
  
  东南大学国家ASIC工程中心,江苏,南京,210096
- 作者简介：
- 基金信息：
- DOI：10.3969/j.issn.0372-2112.2016.01.019
  CLC： TP368.1
- Published Online：25 January 2016，
  
  Published：2016
- 稿件说明：
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HUANG Yu, LIU Si-yang, GU Chun-de, et al. The Degradation Mechanism for 1.2kV SiC MOSFET Under Unclamped Repetitive Stress[J]. Acta Electronica Sinica, 2016, 44(1): 130-134.
DOI：

HUANG Yu, LIU Si-yang, GU Chun-de, et al. The Degradation Mechanism for 1.2kV SiC MOSFET Under Unclamped Repetitive Stress[J]. Acta Electronica Sinica, 2016, 44(1): 130-134. DOI： 10.3969/j.issn.0372-2112.2016.01.019.

摘要

本文首次研究了1.2kV碳化硅(Silicon Carbide

SiC)MOSFET在非钳位重复应力(Unclamped Repetitive Stress

URS)应力下的退化现象

并通过软件仿真和电荷泵测试技术对该现象进行了深入的分析.研究结果表明:URS应力会使得器件积累区由于碰撞电离产生大量的电子空穴对

其中的热空穴将在电场的作用下注入到氧化层中

使氧化层中出现许多空间正电荷

这些空间正电荷的存在使得器件的导通电阻与阈值电压出现下降

关态漏电流出现上升.

Abstract

The degradation behavior for 1.2kV Silicon Carbide (SiC) MOSFET under unclamped repetitive stress (URS) has been firstly investigated in detail by the analysis of two-dimensional device simulations and charge pumping measurements.It has been shown that

when the device is under URS condition

the electric field and impact ionization in the accumulation region become sufficiently large

so as to generate numerous hot holes.These avalanched-generated hot holes will be injected and trapped into the gate oxide above the accumulation region

resulting in an initial decrease of the on-state resistance and threshold voltage

as well as an increase in drain-source leakage current.

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