CMOS Digital Temperature Sensor with Self-Correcting Technique

JIANG Hui-qiang; CHEN Xu-bin; MO Jiong-jiong; WANG Zhi-yu; LIU Jia-rui; CHEN Hua; YU Fa-xin

doi:10.3969/j.issn.0372-2112.2017.04.025

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CMOS Digital Temperature Sensor with Self-Correcting Technique

更新时间：2025-07-16

- CMOS Digital Temperature Sensor with Self-Correcting Technique
- Acta Electronica Sinica Vol. 45, Issue 4, Pages: 944-949(2017)
- 作者机构：
  
  浙江大学航空航天学院,浙江,杭州,310027
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China (No.61401395);Funded by Fundamental Research Funds for the Central Universities (No.2014QNA4033)
- DOI：10.3969/j.issn.0372-2112.2017.04.025
  CLC： TN402
- Published Online：25 April 2017，
  
  Published：2017
- 稿件说明：
移动端阅览
JIANG Hui-qiang, CHEN Xu-bin, MO Jiong-jiong, et al. CMOS Digital Temperature Sensor with Self-Correcting Technique[J]. Acta Electronica Sinica, 2017, 45(4): 944-949.
DOI：

JIANG Hui-qiang, CHEN Xu-bin, MO Jiong-jiong, et al. CMOS Digital Temperature Sensor with Self-Correcting Technique[J]. Acta Electronica Sinica, 2017, 45(4): 944-949. DOI： 10.3969/j.issn.0372-2112.2017.04.025.

摘要

介绍了一种CMOS数字温度传感器的设计方法，并针对因工艺偏差所导致一致性差、成品率低的问题提出一种新型自校正技术.利用自校正技术可以有效抑制温度传感器核心模块的基准电压随工艺波动而变化，改善芯片之间的一致性.文中设置不同的工艺角对基准电压源进行仿真，通过对比开启与关闭自校正模块状态下基准电压的最大偏差，验证了自校正技术的有效性.本设计采用CSMCB5212 0.5 m CMOS工艺实现，提供SPI数字接口，输出10-bit温度值.实际测试结果表明该温度传感器在-35℃~105℃温度范围内温度精度1℃，整体功耗小于0.6mW.

Abstract

A CMOS temperature sensor with digital output is presented

and a new self-correcting technique is proposed to solve the problem of poor consistency and low yield caused by process variations.By applying the self-correcting technique

the change of the reference voltage in the temperature sensor kernel module is effectively suppressed and the consistency among chips is obviously improved.In this paper

the reference voltage module is simulated with different process corners.By comparing the maximum deviation of the reference voltages in the open and close states of the self-correcting module

the effectiveness of self-correcting technique is validated.The complete design is fabricated in the CSMCB5212 0.5 m CMOS process

providing an SPI digital interface with 10-bit output data.In the temperature range from -35℃ to 105℃

the inaccuracy of experiment results is merely 1℃

and the overall power consumption is less than 0.6mW.

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