A Research of Two Kinds of Mechanism and Performance Improvement of Resistive Switching Access Memory

WANG Wei; CHEN Jin; YU Lin-feng; XUE Qun-hu; YANG Chun-li

doi:10.3969/j.issn.0372-2112.2017.04.031

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A Research of Two Kinds of Mechanism and Performance Improvement of Resistive Switching Access Memory

更新时间：2025-07-16

- A Research of Two Kinds of Mechanism and Performance Improvement of Resistive Switching Access Memory
- Acta Electronica Sinica Vol. 45, Issue 4, Pages: 989-999(2017)
- 作者机构：
  
  西安建筑科技大学材料与矿资学院,陕西,西安,710055
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China (No.51372193);Foundation of Ministry of Education (No.20126120120016);Research Fund for the Doctoral Program of Higher Education of China Research Fund for the Doctoral Program of Higher Education of China (No.20126120120018)
- DOI：10.3969/j.issn.0372-2112.2017.04.031
  CLC： TP333
- Published Online：25 April 2017，
  
  Published：2017
- 稿件说明：
移动端阅览
WANG Wei, CHEN Jin, YU Lin-feng, et al. A Research of Two Kinds of Mechanism and Performance Improvement of Resistive Switching Access Memory[J]. Acta Electronica Sinica, 2017, 45(4): 989-999.
DOI：

WANG Wei, CHEN Jin, YU Lin-feng, et al. A Research of Two Kinds of Mechanism and Performance Improvement of Resistive Switching Access Memory[J]. Acta Electronica Sinica, 2017, 45(4): 989-999. DOI： 10.3969/j.issn.0372-2112.2017.04.031.

摘要

在新型非易失性存储领域，结构简单、高速低耗的阻变存储器具有巨大优势和很强的竞争力.简要介绍了阻变存储器的结构及其两个电阻转变行为.总结了两类阻变机理，探讨了阻变存储器性能优化的方法，以及优化方法在阻变性能与器件的可靠性和稳定性之间如何取得平衡统一的问题，并展望了其前景.

Abstract

In the field of new type of nonvolatile memory

the simple-structured RRAM with high speed and low consumption has manifested great advantages and competitiveness.In this review

a brief introduction to the structures of RRAM and two kinds of resistive switching behaviors are made.And then

a summary of two kinds of resistive mechanisms is also given.With discussing the performance optimization of RRAM

how the optimized methods achieve balance and unification between the resistive performance and the reliability and stability of the devices is simply demonstrated.In the end

the future of RRAM is also prospected.

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