High Performance Ternary SRAM-PUF Circuit Based on CNFET

WANG Peng-jun; GONG Dao-hui; ZHANG Hui-hong; KANG Yao-peng

doi:10.3969/j.issn.0372-2112.2017.05.010

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High Performance Ternary SRAM-PUF Circuit Based on CNFET

更新时间：2025-07-16

- High Performance Ternary SRAM-PUF Circuit Based on CNFET
- Acta Electronica Sinica Vol. 45, Issue 5, Pages: 1090-1095(2017)
- 作者机构：
  
  宁波大学电路与系统研究所,浙江,宁波,315211
- 作者简介：
- 基金信息：
- DOI：10.3969/j.issn.0372-2112.2017.05.010
  CLC： TP331
- Published Online：25 May 2017，
  
  Published：2017
- 稿件说明：
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WANG Peng-jun, GONG Dao-hui, ZHANG Hui-hong, et al. High Performance Ternary SRAM-PUF Circuit Based on CNFET[J]. Acta Electronica Sinica, 2017, 45(5): 1090-1095.
DOI：

WANG Peng-jun, GONG Dao-hui, ZHANG Hui-hong, et al. High Performance Ternary SRAM-PUF Circuit Based on CNFET[J]. Acta Electronica Sinica, 2017, 45(5): 1090-1095. DOI： 10.3969/j.issn.0372-2112.2017.05.010.

摘要

通过对碳纳米管场效应晶体管（Carbon Nanotube Field Effect Transistor，CNFET）和物理不可克隆函（Physical Unclonable Functions，PUF）电路的研究，提出一种高性能三值SRAM-PUF电路结构.该电路结构首先利用交叉耦合三值反相器产生随机电流，并对其电流进行失配分析；然后结合三值SRAM单元的电流竞争得到随机的、不可克隆的三值输出信号0、1和2.在32nm CNFET标准模型库下，采用HSPICE对所设计的三值SRAM-PUF电路进行Monte Carlo仿真，分析其随机性、唯一性等性能.模拟结果表明所设计的三值SRAM-PUF电路归一化随机性偏差和唯一性偏差均为0.03%，且与传统二值CMOS设计的PUF电路相比工作速度提高33%，激励响应对数量为原来的（1.5）

倍.

Abstract

By researching the Carbon Nanotube Field Effect Transistor(CNFET) and the Physical Unclonable Functions(PUF) circuit

a structure of high-performance ternary SRAM-PUF circuit is proposed.In this circuit structure

the cross-coupling ternary inverters generate random current

which is analyzed according to the mismatch feature.After competing the random current of ternary SRAM

it produces three-valued signal

such as 0

1 and 2.Under Stanford University 32nm CNFET standard model

HSPICE is used for Monte Carlo simulation to analysis the randomness

uniqueness and other features.And simulation results show that the randomness variation an

d uniqueness can be achieved at 0.03% after normalization.Comparing with conventional binary CMOS PUF circuit

the proposed circuit improves the speed by 33%

and increases the number of challenge-response by(1.5)

times.

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