With the unprecedented development of radio frequency circuits

inductors as an important passive components in radio frequency circuit are applied more and more widely.Current inductor models have narrow application frequency range and simulation results are poor fit with measurement results.A modified scalable model for on-chip spiral inductors in 0.13 m silicon-on-insulator (SOI) CMOS process is developed.The model is a -circuit with a parallel RL network connecting both vertical branches to account for substrate coupling.It includes improvements in the evaluation of eddy currents in metals caused by the proximity effect.The regression analysis method of mathematical statistics is used to obtain the expressions of scalable model parameters.13 on-chip inductors with different geometries are fabricated for the verifications.The proposed approach can thus provide better circuit interpretations of the inductor behaviors for all considered geometries up to frequencies above self-resonance.