A Compact Large-Signal Model Topology for GaN High Electron Mobility Transistors

HAN Ke-feng; JIANG Hao; QIN Gui-xia; KONG Yue-chan

doi:10.3969/j.issn.0372-2112.2018.02.033

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A Compact Large-Signal Model Topology for GaN High Electron Mobility Transistors

更新时间：2025-07-16

- A Compact Large-Signal Model Topology for GaN High Electron Mobility Transistors
- Acta Electronica Sinica Vol. 46, Issue 2, Pages: 501-506(2018)
- 作者机构：
  
  南京电子器件研究所,江苏,南京,210016
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China (No.61474101)
- DOI：10.3969/j.issn.0372-2112.2018.02.033
  CLC： TN305.2TN325+.3
- Published Online：25 February 2018，
  
  Published：2018
- 稿件说明：
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HAN Ke-feng, JIANG Hao, QIN Gui-xia, et al. A Compact Large-Signal Model Topology for GaN High Electron Mobility Transistors[J]. Acta Electronica Sinica, 2018, 46(2): 501-506.
DOI：

HAN Ke-feng, JIANG Hao, QIN Gui-xia, et al. A Compact Large-Signal Model Topology for GaN High Electron Mobility Transistors[J]. Acta Electronica Sinica, 2018, 46(2): 501-506. DOI： 10.3969/j.issn.0372-2112.2018.02.033.

摘要

GaN高电子迁移率晶体管（HEMT）以其复杂的器件特性使其大信号建模变得十分困难，尽管EEHEMT、Angelov等模型结构曾经成功应用于GaAs HEMT/MESFET的大信号模型，但当它们被用于GaN HEMT建模时却不再准确和完备.面向GaN HEMT器件的大信号模型，本文提出了一种紧凑的模型拓扑，此模型拓扑综合了GaN HEMT器件的直流电压-电流（I-V）特性、非线性电容、寄生参数、栅延迟漏延迟与电流崩塌、自热效应以及噪声等特性.经验证此模型拓扑在仿真中具有很好的收敛性，适用于GaN HEMT器件的大信号模型的建立，满足GaN基微波电路设计对器件模型的需求.

Abstract

GaN high electron mobility transistors (HEMTs) are difficult to model because of their complex device characteristics. Although EEHEMT and Angelov models have been successfully applied to large-signal models of GaAs HEMT/MESFETs

but they are no longer accurate and complete when used in GaN HEMT modeling. In this paper

a compact model topology is proposed for GaN HEMTs which is based on the DC I-V

non-linear capacitance

parasitic elements

gate/drain lag and current collapse

thermal effects and noise characteristics of GaN HEMT devices. It is proved that this model topology has good convergence in simulation. It is suitable for the establishment of large-signal models of GaN HEMTs

and satisfies the demand for device model of the GaN-based microwave-wave circuit design.

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