Study of Measurement of the Ion Effective LET in Semiconductor Devices

SHI Shu-ting; GUO Gang; LIU Jian-cheng; CAI Li; CHEN Quan; SHEN Dong-jun; HUI Ning; ZHANG Yan-wen; QIN Ying-can; HAN Jin-hua; CHEN Qi-ming; ZHANG Fu-qiang; YIN Qian; XIAO Shu-yan

doi:10.3969/j.issn.0372-2112.2018.10.032

您当前的位置：

首页 >

文章列表页 >

Study of Measurement of the Ion Effective LET in Semiconductor Devices

更新时间：2025-07-16

- Study of Measurement of the Ion Effective LET in Semiconductor Devices
- Acta Electronica Sinica Vol. 46, Issue 10, Pages: 2546-2550(2018)
- 作者机构：
  
  中国原子能科学研究院核物理所, 国防科技工业抗辐照应用技术创新中心,北京,102413
- 作者简介：
- 基金信息：
  
  Subject of National Security Major Basic Research Project of China (No.6132240302-1);Youth Fund of National Natural Science Foundation of China (No.11105230)
- DOI：10.3969/j.issn.0372-2112.2018.10.032
  CLC： TL84O571.6
- Published Online：25 October 2018，
  
  Published：2018
- 稿件说明：
移动端阅览
SHI Shu-ting, GUO Gang, LIU Jian-cheng, et al. Study of Measurement of the Ion Effective LET in Semiconductor Devices[J]. Acta Electronica Sinica, 2018, 46(10): 2546-2550.
DOI：

SHI Shu-ting, GUO Gang, LIU Jian-cheng, et al. Study of Measurement of the Ion Effective LET in Semiconductor Devices[J]. Acta Electronica Sinica, 2018, 46(10): 2546-2550. DOI： 10.3969/j.issn.0372-2112.2018.10.032.

摘要

提出了一种基于电荷收集测试技术的离子有效LET值测量方法.首先对半导体器件内收集电荷量与入射离子有效LET值之间的关系进行了分析，根据二者之间的关系提出通过测量电荷收集量从而测量离子有效LET值的方法；然后建立了半导体器件电荷收集测试系统，利用PN结和SRAM对测量方法进行了验证；最后成功利用该方法解释了以往单粒子效应实验中出现的数据异常.

Abstract

An effective LET of incident ions measurement method based on charge collection test technique is proposed. Firstly

the relationship between effective LET and amount of collected charge caused by incident ions in semiconductor devices analyzed

and according to the relationship the effective LET measurement method is raised. Then a semiconductor device charge collection test system is established and the effective LET test method is verified utilizing PN junction and SRAM. Finally

the effective LET in a semiconductor device that has abnormal Single Event Upset cross-section data is measured and find the reason for the abnormal data.

关键词

Keywords

references

Views

191

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Comparison and Analysis of Radiation Effects between Floating Gate ROMs and SRAMs

SRAM-PUF Preselection Algorithm Based on Data Remanence Time

Single Event Effect and its Hardening Technique in Nano-scale CMOS Integrated Circuits

Related Author

WANG Yan-ping

LI Guo-zheng

CHEN Xiao-hua

YANG Hai-liang

GENG Bin

HE Chao-hui

ZHANG Pei-yong

CHEN Ze-fu

Related Institution

Northwest Institute of Nuclear Technology,P.O.Box 69-13

School of Micro-Nano Electronics， ZheJiang University

Zhuhai Bentu Electronics Co.， Ltd

Beijing Microelectronics Technology Insitute

⁰