Analytical Models of Subthreshold Current and Subthreshold Slope for Symmetrical Triple-Material Double-Gate s-Si MOSFETs

XIN Yan-hui; YUAN He-cai; XIN Yang

doi:10.3969/j.issn.0372-2112.2018.11.026

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Analytical Models of Subthreshold Current and Subthreshold Slope for Symmetrical Triple-Material Double-Gate s-Si MOSFETs

更新时间：2025-07-16

- Analytical Models of Subthreshold Current and Subthreshold Slope for Symmetrical Triple-Material Double-Gate s-Si MOSFETs
- Acta Electronica Sinica Vol. 46, Issue 11, Pages: 2768-2772(2018)
- 作者机构：
  
  1. 华北水利水电大学信息工程学院,河南,郑州,450046
  2. 华北水利水电大学数学与统计学院,河南,郑州,450046
  3. 水利勘查设计研究院,山东,德州,253014
  4. 华北水利水电大学信息工程学院,河南,郑州,450046
  5. 华北水利水电大学数学与统计学院,河南,郑州,450046
  6. 水利勘查设计研究院,山东,德州,253014
- 作者简介：
- 基金信息：
  
  Technology Research and Development Program of Henan Province (No.172102210367);High-level Talents Resrach Project of North China University of Water Resources and Electric Power (No.40436)
- DOI：10.3969/j.issn.0372-2112.2018.11.026
  CLC： TN386
- Published Online：25 November 2018，
  
  Published：2018
- 稿件说明：
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XIN Yan-hui, YUAN He-cai, XIN Yang. Analytical Models of Subthreshold Current and Subthreshold Slope for Symmetrical Triple-Material Double-Gate s-Si MOSFETs[J]. Acta Electronica Sinica, 2018, 46(11): 2768-2772.
DOI：

XIN Yan-hui, YUAN He-cai, XIN Yang. Analytical Models of Subthreshold Current and Subthreshold Slope for Symmetrical Triple-Material Double-Gate s-Si MOSFETs[J]. Acta Electronica Sinica, 2018, 46(11): 2768-2772. DOI： 10.3969/j.issn.0372-2112.2018.11.026.

摘要

基于泊松方程和边界条件，推导了对称三材料双栅应变硅金属氧化物半导体场效应晶体管（MOSFET：metal oxide semiconductor field effect transistor）的表面势解析解.利用扩散-漂移理论，在亚阈值区电流密度方程的基础上，提出了亚阈值电流与亚阈值斜率二维解析模型.分析了沟道长度、功函数差、弛豫SiGe层的Ge组份、栅介质层的介电常数、应变硅沟道层厚度、栅介质高k层厚度和沟道掺杂浓度等参数对亚阈值性能的影响，并对亚阈值性能改进进行了分析研究.研究结果为优化器件参数提供了有意义的指导.模型解析结果与DESSIS仿真结果吻合较好.

Abstract

The surface potential analytical solution is derived by Poisson equation and the boundary condition for symmetrical triple-material (TM) double-gate (DG) strained-Si (s-Si) MOSFETs. Two-dimensional analytical models of subthreshold current and subthreshold slope are proposed from subthreshold current density equation based on the diffusion-drift theory. Effects of device parameters on subthreshold characteristics have been discussed and the physical mechanism has been explained. The parameters include channel length

work function difference、Ge mole fraction

permittivity of gate dielectric

strained Si film thickness

high-k layer thickness and channel doping concentration. The improvement of the subthreshold performance has been studied

which provides significant guidance to optimize the device parameters. The analytical models agree well with simulation using DESSIS.

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