Visible Light Photon Modulation Based on Focused Ion Beam Technology

CAI Wei; XING Yuan; SHI Zheng; YUAN Jia-lei; JIA Zhi-hong; WANG Yong-jin

doi:10.3969/j.issn.0372-2112.2019.01.034

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Visible Light Photon Modulation Based on Focused Ion Beam Technology

更新时间：2025-07-16

- Visible Light Photon Modulation Based on Focused Ion Beam Technology
- Acta Electronica Sinica Vol. 47, Issue 1, Pages: 252-256(2019)
- 作者机构：
  
  1. 南京邮电大学 Peter Gr&uuml
  2. nberg研究中心,江苏,南京,210003
  3. 南京工程学院计算机工程学院,江苏,南京,211167
  4. 重庆大学材料科学与工程学院,重庆,400044
  6. nberg研究中心,江苏,南京,210003
  7. 南京工程学院计算机工程学院,江苏,南京,211167
  8. 重庆大学材料科学与工程学院,重庆,400044
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China (No.61322112, No.61531166004);Doctoral students Research Innovation Project of Colleges and Universities in Jiangsu Province (No.KYZZ16_0258);Interdisciplinary Innovation Team Program of Chinese Academy of Sciences;Innovation Fund of Nanjing Institute of Technology (No.CKJA201705, No.CKJA201708)
- DOI：10.3969/j.issn.0372-2112.2019.01.034
  CLC： TN911
- Published Online：25 January 2019，
  
  Published：2019
- 稿件说明：
移动端阅览
CAI Wei, XING Yuan, SHI Zheng, et al. Visible Light Photon Modulation Based on Focused Ion Beam Technology[J]. Acta Electronica Sinica, 2019, 47(1): 252-256.
DOI：

CAI Wei, XING Yuan, SHI Zheng, et al. Visible Light Photon Modulation Based on Focused Ion Beam Technology[J]. Acta Electronica Sinica, 2019, 47(1): 252-256. DOI： 10.3969/j.issn.0372-2112.2019.01.034.

摘要

采用晶圆级工艺，制备了一种单片集成光源和直波导的硅基氮化镓光电集成器件，结合聚焦离子束技术，使用Ga离子束在直波导上刻蚀形成了一个布拉格反射镜（DBR），并对器件的光子调控功能进行研究.特殊的InGaN波导结构使得器件在制备过程中不再需要复杂的硅移除和晶片背面减薄工艺，硅衬底可以保持完整.实验结果表明，作为光源的多量子阱发光二极管（MQW-LED）具有良好的电流-电压特性.MQW-LED开启后部分光子耦合进直波导，被限制在波导内向前传输，在DBR处发生全反射并部分衍射到自由空间中.由器件的电致发光光谱可知，制备在波导上的DBR对波导内传输的光子进行了有效调控.

Abstract

On-chip photonic integration of light source and straight waveguide on the GaN-on-silicon platform is fabricated by wafer-level technique.With focused ion beam

a high reflective distributed Bragg reflector (DBR) is etched on the straight waveguide using a Ga ion beam.And the photon modulation function of the device is studied.Complicated backside alignment and etching processes are saved and silicon substrate can be kept intact because of the particularity of InGaN waveguide structures.The experimental results show that the multiple-quantum-well light emitting diode (MQW-LED) has an excellent I-V performance.As the MQW-LED is switched on

some photons are coupled into the straight waveguide

and are transmitted forward in the waveguide

some light is total reflected at DBR

and partially diffracted into free space.According to the electroluminescence spectra of the devices

photons in the waveguide is effectively modulated by the DBR fabricated on the waveguide.

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