ADE Physical Modeling and Parameters Extraction of 1200V Field Stop Insulated Gate Bipolar Transistor

LU Dai; WANG Wen-jie; WANG Qing-zhen; YU Ping-ping; JIANG Yan-feng

doi:10.3969/j.issn.0372-2112.2019.02.025

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ADE Physical Modeling and Parameters Extraction of 1200V Field Stop Insulated Gate Bipolar Transistor

更新时间：2025-07-16

- ADE Physical Modeling and Parameters Extraction of 1200V Field Stop Insulated Gate Bipolar Transistor
- Acta Electronica Sinica Vol. 47, Issue 2, Pages: 434-439(2019)
- 作者机构：
  
  江南大学物联网工程学院电子工程系,江苏,无锡,214122
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China (No.61774078);Independent Research Program of Jiangnan University (No.1255210322160220)
- DOI：10.3969/j.issn.0372-2112.2019.02.025
  CLC： TN3
- Published Online：25 February 2019，
  
  Published：2019
- 稿件说明：
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LU Dai, WANG Wen-jie, WANG Qing-zhen, et al. ADE Physical Modeling and Parameters Extraction of 1200V Field Stop Insulated Gate Bipolar Transistor[J]. Acta Electronica Sinica, 2019, 47(2): 434-439.
DOI：

LU Dai, WANG Wen-jie, WANG Qing-zhen, et al. ADE Physical Modeling and Parameters Extraction of 1200V Field Stop Insulated Gate Bipolar Transistor[J]. Acta Electronica Sinica, 2019, 47(2): 434-439. DOI： 10.3969/j.issn.0372-2112.2019.02.025.

摘要

绝缘栅双极晶体管（IGBT）是微电子学研究的热点之一，而相关电路仿真迫切需要该器件的等效模型.本文提出基于傅里叶解双极扩散方程（ADE）的1200V场终止型IGBT物理模型，通过RC电路等效漂移区载流子分布，精确求解双极扩散方程.该模型针对大功率IGBT的工作原理，采用大注入假设条件，在综合分析场终止层的同时，根据1200V场终止型IGBT的特点考虑漂移区载流子的复合效应.在提取器件模型所需的关键参数后，用实际IGBT的测量结果对该模型的仿真结果进行了验证，通过分析静态以及关断瞬态特性曲线，仿真与实验数据误差均值小于8%，证明所建模型及参数提取方法的精确度.

Abstract

Insulated gate bipolar transistor(IGBT)is one of the hot topics in microelectronics research.The related circuit simulation urgentlyneeds the equivalent model of the device.The physical model of the 1200V field-stop IGBT solving ambipolar diffusion equation(ADE)based on the Fourier transformis proposed in this paper.The ADE is solved accurately by the distribution of carriers in equivalent drift region of the RC circuit.The model is based on the working principle of high-power IGBT.The high-level injection hypothesis is used.The complex effect of the 1200V field-stop IGBT is considered according to the characteristics of the 1200V field-stop IGBT.After extracting the key parameters of the model

the simulation results are verified by the actual measurement results.The average error of simulation and experiment is less than 8%.The accuracy of the model and parameter extraction method is proved by analyzing the static and turn-off transient characteristics.

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