The impact of body effect on the total dose effect of ultra deep sub micron SOI devices is studied.130nm SOI NMOSFET devices were irradiated in TG bias state

the electrical parameters of devices before and after irradiation were monitored under different body bias.The short channel PD SOI NMOS devices are more sensitive to total dose radiation

and the larger channel width to length ratio of devices will cause more damage.After a certain dose of radiation

the partially depleted devices will turn into fully depleted devices

and the radiation-

induced coupling effect can be observed.Significant threshold voltage shifts and large leakage currents can be observed after irradiation of 10 m/0.35 m devices.The transfer characteristic curve at negative body bias is positively shifted compared with it at zero body bias before the device is irradiated.When the body voltage

Vb

=-1.1V

then partially depleted devices become full-depletion devices.And continued increase in|Vb|will not result in continued increase in the width of the depletion area

which shows that the negative body bias can no longer adjust the width of the depletion region

so the transfer characteristic curve of the device does not show a positive shift similar to that before irradiation.