Effect of SiO2 Modification of Bi1.5Zn1.0Nb1.5O7 Gate Insulator on the Performance of ZnO-TFTs

doi:10.3969/j.issn.0372-2112.2019.06.023

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Effect of SiO₂ Modification of Bi_1.5Zn_1.0Nb_1.5O₇ Gate Insulator on the Performance of ZnO-TFTs

更新时间：2025-07-02

- Effect of SiO₂ Modification of Bi_1.5Zn_1.0Nb_1.5O₇ Gate Insulator on the Performance of ZnO-TFTs
- Acta Electronica Sinica Vol. 47, Issue 6, Pages: 1344-1351(2019)
- 作者机构：
  
  陕西理工大学机械工程学院,陕西,汉中,723001
- 作者简介：
- 基金信息：
  
  Scientific Research Program Funded by Shaanxi Provincial Education Department (No.17JK0144, No.18JK0151);Program of Shaanxi Key Laboratory of Industrial Automation (No.09JS045);Startup Program for Introduced Talents of Shaanxi University of Technology (No.SLGQD2017-19)
- DOI：10.3969/j.issn.0372-2112.2019.06.023
  CLC： TN321.5
- Published：2019
- 稿件说明：
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Effect of SiO₂ Modification of Bi_1.5Zn_1.0Nb_1.5O₇ Gate Insulator on the Performance of ZnO-TFTs[J]. Acta Electronica Sinica, 2019, 47(6): 1344-1351.
DOI：

Effect of SiO₂ Modification of Bi_1.5Zn_1.0Nb_1.5O₇ Gate Insulator on the Performance of ZnO-TFTs[J]. Acta Electronica Sinica, 2019, 47(6): 1344-1351. DOI： 10.3969/j.issn.0372-2112.2019.06.023.

摘要

具有高介电常数的栅绝缘层材料存在某种极化及耦合作用，使得ZnO-TFTs具有高的界面费米能级钉扎效应、大的电容耦合效应和低的载流子迁移率.为了解决这些问题，本文提出了一种使用SiO

修饰的Bi

1.5

1.0

1.5

作为栅绝缘层的ZnO-TFTs结构，分析了SiO

修饰对栅绝缘层和ZnO-TFTs性能的影响.结果表明，使用SiO

修饰后，栅绝缘层和ZnO-TFTs的性能得到显著提高，使得ZnO-TFTs在下一代显示领域中具有非常广泛的应用前景.栅绝缘层的漏电流密度从4.510

-5

A/cm

降低到7.710

-7

A/cm

，粗糙度从4.52nm降低到3.74nm，ZnO-TFTs的亚阈值摆幅从10V/dec降低到2.81V/dec，界面态密度从810

-2

降低到910

-2

，迁移率从0.001cm

/（Vs）升高到0.159cm

/（Vs）.

Abstract

The gate insulator material with high dielectric constant has some polarization and coupling effect

which makes ZnO-TFTs have high interface Fermi level pinning effect

large capacitive coupling effect and low carrier mobility.To solve these problems

in this paper

a kind of ZnO-TFTs structure u

sing SiO

modification of Bi

1.5

1.0

1.5

as gate insulator was proposed.The effect of SiO

modification on the performance of gate insulator and ZnO-TFTs was systematically investigated.The results showed that the properties of gate insulators and ZnO-TFTs were significantly improved after SiO

modification

which makes ZnO-TFTs have a very wide application prospect in the next generation display field.The leakage current density and roughness of gate insulators decreased from 4.510

-5

A/cm

to 7.710

-7

A/cm

and from 4.52nm to 3.74nm

respectively.The sub-threshold swing and interface state density of ZnO-TFTs decreased from 10V/dec.to 2.81V/dec.and from 810

-2

to 910

-2

respectively.The mobility of ZnO-TFTs increased from 0.001cm

/(Vs) to 0.159cm

/(Vs).

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