为提高三相逆变器的转换效率,提出了一种新型三相谐振极软开关逆变器拓扑结构,通过在每相桥臂上增加结构简单的辅助电路,实现了主开关的零电压软开通和零电流软关断.逆变器主开关采用金属氧化物半导体场效应晶体管(Metal Oxide Semiconductor Field Effect Transistor,MOSFET)或者绝缘栅双极型晶体管(Insulated Gate Bipolar Transistor,IGBT)时,都能实现无损耗切换,解决了MOSFET内部结电容造成的容性开通损耗问题和IGBT拖尾电流造成的关断损耗问题.分析了电路的工作过程,实验结果表明开关器件完成了软切换.因此,该拓扑结构对于提高逆变器的性能具有重要意义.
Abstract
To improve the conversion efficiency of the three-phase inverter
a novel topology of three-phase resonant pole soft-switching inverter is proposed.By adding a simple auxiliary circuit on each phase of the bridge arm
the main switches realize zero-voltage turn-on and zero-current turn-off.Metal Oxide Semiconductor Field Effect Transistor (MOSFET) or Insulated Gate Bipolar Transistor (IGBT) which is used as the main switch of the inverter could realize the lossless switching
so as to solve the problem of capacitive turn-on loss caused by the MOSFET internal junction capacitance and the turn-off loss caused by the IGBT trailing current.This paper analyzes the working process of the circuit.The experimental results show that the switching devices achieve soft-switching.Therefore
the topology is of great importance to improve the performance of the inverter.