80W GaN Power Amplifier with Ultra Wideband of 1~4GHz

YANG Wen-qi; ZHONG Shi-chang; LI Yu-chao

doi:10.3969/j.issn.0372-2112.2019.08.026

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80W GaN Power Amplifier with Ultra Wideband of 1~4GHz

更新时间：2025-07-16

- 80W GaN Power Amplifier with Ultra Wideband of 1~4GHz
- Acta Electronica Sinica Vol. 47, Issue 8, Pages: 1803-1808(2019)
- 作者机构：
  
  南京电子器件研究所,江苏,南京,210016
- 作者简介：
- 基金信息：
- DOI：10.3969/j.issn.0372-2112.2019.08.026
  CLC： TN722.7+5
- Published Online：25 August 2019，
  
  Published：2019
- 稿件说明：
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YANG Wen-qi, ZHONG Shi-chang, LI Yu-chao. 80W GaN Power Amplifier with Ultra Wideband of 1~4GHz[J]. Acta Electronica Sinica, 2019, 47(8): 1803-1808.
DOI：

YANG Wen-qi, ZHONG Shi-chang, LI Yu-chao. 80W GaN Power Amplifier with Ultra Wideband of 1~4GHz[J]. Acta Electronica Sinica, 2019, 47(8): 1803-1808. DOI： 10.3969/j.issn.0372-2112.2019.08.026.

摘要

基于南京电子器件研究所0.25mGaN HEMT工艺平台，设计了一款工作频率为1~4GHz，连续波输出功率大于80W的超宽带功率放大器.放大器采用低通L-C匹配网络实现管芯输入输出阻抗到实阻抗的变换；并利用切比雪夫变换器结构实现超宽带匹配；以单路输入输出端口匹配到100后，两路直接电路合成到50的方法实现了大功率超宽带功放的功率合成.放大器偏置电压32V，静态电流0.4A.测试结果显示，在1~4GHz带宽内，放大器连续波输出功率大于49.05dBm （80.3W），最高输出功率为50.6dBm （114.8W），饱和功率增益大于9dB，功率平坦度小于0.8dB，最大漏极效率为62.5%.

Abstract

Based on the 0.25μm GaN HEMT process platform of Nanjing Institute of Electronics Technology

an ultra-wideband power amplifier with an operating frequency of 1~4GHz and a continuous wave output power greater than 80W is designed. The amplifier uses a low-pass LC matching network to achieve the conversion of the input and output impedance of the die to the real impedance

and the ultra-wideband matching is realized by the Chebyshev converter structure; after the single input/output port is matched to 100Ω

the two direct circuits are synthesized to 50Ω. The method achieves power synthesis of a high-power ultra-wideband power amplifier. The amplifier has a bias voltage of 32V and a quiescent current of 0.4A. The test results show that in the bandwidth of 1~4GHz

the continuous wave output power of the amplifier is greater than 49.05dBm (80.3W)

the maximum output power is 50.6dBm (114.8W)

the saturation power gain is greater than 9dB

and the power flatness is less than ±0.8dB.The maximum drain efficiency is 62.5%.

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