Data retention is an important reliability characteristic of NAND flash memory. Based on the user mode

this paper studies the data retention characteristics of charge trapping 3D NAND flash memory under different initial conditions. The results show that device programmed can effectively reduce the bit error rate after high-temperature data retention of NAND flash memory. Especially with the increase of the number of erasing and writing

the data retention of charge-trapping 3D NAND flash memory is more obvious under different initial conditions. The result shows that the flash memory is most suitable for storage 0-1V

charge-trapping 3D NAND flash devices should avoid long-term deep erase conditions. In addition

modeled and demonstrated based on the phenomenon the threshold voltage offset after the high-temperature data retention of the flash memory is increased when initial state is erase state. Through the design experiment

the mechanism factor model accords with the experimental result.This study provides a theoretical reference for the long-term storage of charge-trapping 3D NAND flash devices.