In this work

we fabricate and investigate the Schottky β-Ga

2

O

3

solar-blind UV photodetectors. The results show that full width at half maximum of the X-ray diffraction peak from (-201) plane of the β-Ga

2

O

3

grown by pulsed laser deposition is only 36 arcsec

indicating that the epitaxial β-Ga

2

O

3

has a high crystal quality. The fabricated Schottky diodes based on the β-Ga

2

O

3

exhibits obvious Schottky rectification characteristic

and the dark current maintains at 0.1 nA magnitude under -5 V bias voltage

and forward conduction voltage is 1.5 V. The photocurrent spectrum show that the device exhib

its remarkable peak response at 240 nm

a steep cutoff wavelength at 260 nm

and a rejection ratio of 1000 between in-band and out-band of solar-blind ultraviolet. Meantime

the effects of different dopants on the crystal quality of β-Ga

2

O

3

are also studied.