Microwave Field Imaging of Stripline Chip Based on Nitrogen-Vacancy Center Ensembles in Diamond

GUO Zhi-gang; CHEN Guo-bin; GU Bang-xing; HE Wen-hao; JIANG Hai-feng; WANG Hao; DU Guan-xiang

doi:10.3969/j.issn.0372-2112.2020.11.023

您当前的位置：

首页 >

文章列表页 >

Microwave Field Imaging of Stripline Chip Based on Nitrogen-Vacancy Center Ensembles in Diamond

更新时间：2025-12-08

- Microwave Field Imaging of Stripline Chip Based on Nitrogen-Vacancy Center Ensembles in Diamond
- Acta Electronica Sinica Vol. 48, Issue 11, Pages: 2258-2262(2020)
- 作者机构：
  
  1. 南京邮电大学通信与信息工程学院,江苏,南京,210003
  2. 宿迁学院机电工程学院,江苏,宿迁,223800
  3. 南京邮电大学通信与信息工程学院,江苏,南京,210003
  4. 宿迁学院机电工程学院,江苏,宿迁,223800
- 作者简介：
- 基金信息：
  
  National Key Research and Development Program of China (No.2017YFB0403602);Jiangsu Province Distinguished Professor Project (No.RK002STP15001);Distinguished Professor Program of Nanjing University of Posts and Telecommunications (No.NY214136);Suqian City Industrial Development Guide Fund project (No.K201912);Natural Science Foundation of Jiangsu Province (No.SBK2020041231)
- DOI：10.3969/j.issn.0372-2112.2020.11.023
  CLC： TN61
- Published Online：25 November 2020，
  
  Published：2020
- 稿件说明：
移动端阅览
GUO Zhi-gang, CHEN Guo-bin, GU Bang-xing, et al. Microwave Field Imaging of Stripline Chip Based on Nitrogen-Vacancy Center Ensembles in Diamond[J]. Acta Electronica Sinica, 2020, 48(11): 2258-2262.
DOI：

GUO Zhi-gang, CHEN Guo-bin, GU Bang-xing, et al. Microwave Field Imaging of Stripline Chip Based on Nitrogen-Vacancy Center Ensembles in Diamond[J]. Acta Electronica Sinica, 2020, 48(11): 2258-2262. DOI： 10.3969/j.issn.0372-2112.2020.11.023.

摘要

为了满足集成微波器件进行高分辨率微波近场测量的需求，本论文提出了一种基于金刚石氮空位（Nitrogen-Vacancy，NV）色心的微波近场成像技术.该技术可用于查找芯片等集成微波器件的干扰源和信号串扰.此微波近场成像方法采用金刚石NV色心颗粒作为场传感器，其中金刚石颗粒固定在锥形光纤的末端.由于塞曼效应，NV色心的光探测磁共振（Optical Detection Magnetic Resonance，ODMR）谱在外部静磁场环境中会分裂成为8个峰，通过测量共振峰频点的Rabi振荡谱，能够得到Rabi频率，接着通过2.8MHz/Gauss换算得出该处的微波场强度，最后通过将所测得所有数据点进行二维图像处理即可得到所测芯片和集成微波器件的表面微波场近场图像.

Abstract

In order to meet the needs of integrated microwave devices for high-resolution microwave near-field measurement

this paper proposes a microwave near-field imaging technology based on the diamond Nitrogen-Vacancy (NV) color center. This technology can be used to find interference sources and signal crosstalk of integrated microwave devices such as chips. This microwave near-field imaging method uses diamond NV color center particles as a field sensor

where the diamond particles are fixed at the end of a tapered fiber. Due to the Zeeman effect

the optical detection magnetic resonance (ODMR) spectrum of the NV color center will split into 8 peaks in the external static magnetic field environment. By measuring the Rabi oscillation spectrum of the resonance peak frequency point

the Rabi frequency can be obtained

and then use 2.8MHz/Gauss to calculate the microwave field strength. Finally

the near-field image of the surface microwave field of the chip and the integrated microwave device can be obtained by performing two-dimensional image processing on all measured data points.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Near Field Distribution Imaging of Transistor Amplifier Based on NV Color Center

Pseudo Third-Order Delta-Sigma Modulator Applied to Internet of Things Sensors

Research on Indoor Millimeter Wave 3D-MIMO Wireless Channel Parameter Extraction and Multipath Cluster Characteristics

A High Resolution Algorithm for 2D-DOA Estimation and Its Fast Implementation in the Presence of SαS Distributed Noise

Related Author

WEI Rong-shan

HU Wei

HUANG Li-jie

WEI Cong

HUANG Chen-xi

LIAO Xi

WANG Yang

CHE Yan-ting

Related Institution

School of Physics and Information Engineering, Fuzhou University

State Key Laboratory of Millimeter Wave,Southeast University

School of Communication and Information Engineering, Chongqing University of Posts and Telecommunications

Key Laboratory of Electronic Information Control, 29th Research Institute of China Electronics Technology Group Corporation

School of Physics and Information Engineering， Fuzhou University

⁰