WANG Tao, WANG Qian, HE Cheng-fa, et al. The Impact of Equilibrium Material on the Total Ionization Dose Effect of Bipolar Devices[J]. Acta Electronica Sinica, 2020, 48(11): 2278-2283.
DOI:
WANG Tao, WANG Qian, HE Cheng-fa, et al. The Impact of Equilibrium Material on the Total Ionization Dose Effect of Bipolar Devices[J]. Acta Electronica Sinica, 2020, 48(11): 2278-2283. DOI: 10.3969/j.issn.0372-2112.2020.11.026.
The Impact of Equilibrium Material on the Total Ionization Dose Effect of Bipolar Devices
NPN bipolar device with surface mount package was selected as the research object in this paper. By setting the equilibrium material and measuring the radiation sensitive electrical parameters of the device during the radiation experiment
the impact of equilibrium material on the total ionization dose effect of bipolar device was studied. The results show that the current gain degradation of bipolar devices with equilibrium material was more obvious than that without equilibrium material
and only setting the front equilibrium material has a greater impact than only setting the back equilibrium material. In the three different equilibrium materials conditions (front and back
front only
and back only)
the devices current gain degradation differences were 22.55%
13.38%
and 12.58 at the 50 krad (Si) dose point and decreased to 11.65%
7.31%
and 4.14% when the total irradiation dose reached 300 krad (Si) respectively. Therefore
in the process of evaluating the radiation hardness level of electronic device
it is necessary to conduct irradiation tests in the device according to the device's structural size
set a certain thickness of the equilibrium material
so that the device sensitive area to meet the secondary electron equilibrium conditions
so as to ensure that the device sensitive area of the actual absorbed dose to reach the nominal irradiation dose.