Based on CRRC silicon carbide (SiC) process technology platform

1200V high capacity SiC metal-oxide semiconductor field-effect transistor (MOSFET) device has been fabricated by adopting ion-implanted JFET region

the optimal termination design

gate bus-bar design and gate oxidation process. The fabricated SiC MOSFET is based on a planar gate structure. The test results show that the gate breakdown voltage of the device is above 55V and it achieves a relatively lower interface state density. At room temperature

the threshold voltage of the device is 2.7V. The maximum blocking voltage and the output current capability of fabricated SiC MOSFET is up to 1600V and 50A

respectively. At 175℃

the threshold voltage shift is less than 0.8V

and the gate leakage current of the device is less than 45nA when the gate voltage is 20V. All of the results show that the fabricated SiC MOSFET has superior electrical characteristics. It occupies a potential in high temperature and high power applications.