The Thermionic-emitting and Ballistic Transport Model for Nanoscale Metal-oxide-semiconductor Field-Effect Transistor (Microelectronics Research Center,Shanghai Jiaotong University,Shanghai 200030,China)
The Thermionic-emitting and Ballistic Transport Model for Nanoscale Metal-oxide-semiconductor Field-Effect Transistor (Microelectronics Research Center,Shanghai Jiaotong University,Shanghai 200030,China)[J]. Acta Electronica Sinica, 2000, 28(8): 52-54.
The Thermionic-emitting and Ballistic Transport Model for Nanoscale Metal-oxide-semiconductor Field-Effect Transistor (Microelectronics Research Center,Shanghai Jiaotong University,Shanghai 200030,China)[J]. Acta Electronica Sinica, 2000, 28(8): 52-54.DOI: