集成光电子学国家重点联合实验室吉林大学实验区,吉林大学,长春,130023
纸质出版:2001
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孙 伟, 田小建, 何炜瑜, 等. 共面微波探针在片测试技术研究[J]. 电子学报, 2001,29(2):222-224.
SUN Wei, TIAN Xiao-jian, HE Wei-yu, et al. On-Wafer Measurement Techniques Using Coplanar Microwave Probe[J]. Acta Electronica Sinica, 2001, 29(2): 222-224.
本文描述了使用共面微波探针的半导体芯片在片测试技术.设计研制出的多种微波探针性能参数稳定
使用寿命在十万次以上
用于在片检测各种GaAs共面集成电路芯片.触头排列为GSG的微波探针
-3dB带宽及反射损耗分别为14GHz和小于-10dB.
We present an on-wafer measurement technique of semiconductor wafer using special coplanar microwave probes.The probe parameters are repeatable enough for S-parameter measurements and the probe life is with 100
000 contacts guaranteed.The multi-contact microwave wafer probe has been developed for on-wafer testing and sifting of GaAs integrated circuits with coplanar type.The insertion loss of microwave probe with a GSG footprint pattern is typically less than 3.0dB
and the return loss is at least 10dB at frequencies below 14GHz.
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