The influence of structure on hot-carrier-effect immunity for deep-sub-micron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) is studied using two-dimensional device simulator Medici and compared to that of counterpart conventional planar devices.The simulated structure parameters include negative junction depth

concave corner and channel effective length.Simulation results prove that grooved-gate device can deeply suppress hot carrier effect even in deep-sub micron region.The simulations also indicate that hot-carrier effect is strongly influenced by concave corner and channel length for grooved gate MOSFET.In the end

the results obtained in this work are explained from the point of interior physical mechanism of device.