ZHENG Yun-guang, ZHANG Shi-lin, GUO Wei-lian, et al. Discussion on the Physical Model in Photoelectric Dual Base Transistor[J]. Acta Electronica Sinica, 2001, 29(8): 1123-1125.
ZHENG Yun-guang, ZHANG Shi-lin, GUO Wei-lian, et al. Discussion on the Physical Model in Photoelectric Dual Base Transistor[J]. Acta Electronica Sinica, 2001, 29(8): 1123-1125.DOI：
Through analyzing the internal current transport in photoelectric dual-base transistor(PDUBAT)
the physical mechanism for the origin of the negative resistance characteristic in the device has been discussed.In this paper
we propose that the cause for the negative resistance in PDUBAT is coming from the feedback effect of the lateral component of output current of the vertical transistor in PDUBAT for the first time. This viewpoint has been confirmed by experiment.
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