A silicon microchannel array and continuum dynode was prepared by processes of Multiplex Inductively Coupled Plasma (ICP) and LPCVD respectively to form a silicon microchannel plate (Si-MCP) with 15 μm of through-hole diameters

16.8 of aspect ratio

and 110 of electron gain at 400V of working voltage.The microchannel topography

dimension effects and electron gain coefficient were analyzed and discussed.In new preparation of MCP

the matrix and dynode materials selections of the new microchannel plates was independent

and no effects existed between their forming processes.By comparing the electron gain of the prepared silicon microchannel plate with conventional one

we found the electron gain of Si-MCP was larger than glass MCP.Though there were some problems to be solved in the manufacture of electron multiplier of Si-MCP

it was expected that Si-MCP would be a new approach to enhance the performances of MCP and the quality of image devices.