MOS capacitors with 3.4nm gate oxide layer were manufactured in this experiment.By measuring current voltage characteristic and evolution of the gate voltage during constant current stress of the capacitors

the electrical characteristics of the gate oxide have been studied.In addition

the effect of boron penetration on gate oxide was investigated.The experimental results showed that the average breakdown field of the 3.4nm gate oxide was 16.7MV/cm.Under constant current stress

soft breakdown occured and the average charge-to-breakdown was 2.7C/cm

2.For p

+

polysilicon gate MOS capacitor

breakdown field and charge-to-breakdown of gate oxide were all decreased because of boron penetration.