The distortion behavior of Silicon-On-Insulator (SOI) MOSFET is systematically discussed in this paper.With Power series analysis method

the harmonic distortion of different configurations of SOI devices (PD

FD and BC) is experimentally investigated.At the same time

a continuous distortion model for SOI MOSFET is presented by including the main distortion-causing mechanisms and the smoothing function.The accuracy of this model has been verified by reproducing the experimental data.The results can be used to evaluate the distortion behavior of mixed mode integrated circuit and serve as a guideline for the optimization of low distortion application.