ZHANG Guo-Yan, LIAO Huai-Lin, HUANG Ru, et al. A Closed-Form High Frequency Noise Model for Short Channel SOI MOSFETS[J]. Acta Electronica Sinica, 2002, 30(11): 1601-1604.
ZHANG Guo-Yan, LIAO Huai-Lin, HUANG Ru, et al. A Closed-Form High Frequency Noise Model for Short Channel SOI MOSFETS[J]. Acta Electronica Sinica, 2002, 30(11): 1601-1604.DOI：
A closed-form model able to predict high frequency thermal noise of SOI MOSFETS for all channel length down to deep sub-micron in saturation region has been presented. By incorporating the energy balance equation
this model can exactly describe the noise behavior of SOI MOSFET.At the same time
the phenomena that a deep sub-micron MOSFET exhibits a minimum noise value at a certain drain current (Iopt) when working in saturation can be explained very well. This model has been verified by experimental data and can be easily implemented into existing circuit simulators such as SPICE.
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