A novel structure

which is implemented by anti-doped silicon island to realize fully depletion in thick film SOI MOSFET

is proposed in this paper and the relationship between its performance and structure key parameters is analyzed.The thick film SOI MOSFET can be fully depleted under normal operating condition

if there is an anti-doped silicon island near the back gate in the channel.Two-dimensional(2-D)numerical simulations have proved that through some optimizations of the width

the height

the doping concentration and the position in the channel of the anti-doped silicon island

thick film SOI MOSFET can achieve fully depleted channel which means no KINK effects

and more driving current resulting in high speed

while it suppresses the SCEs effectively.The simulation results show that:optimized anti-doped silicon island should be positioned in the center of the channel near the back gate

and its width is three fifth of the channel length with height half of the thickness of silicon film

while its doping concentration keeps higher than that of the substrate.Most importantly

this novel structure shows excellent tolerance of the fluctuation of the width

height

position and doping concentration.It can be seen that this thick-film FD SOI MOSFET will be one of the promising structures in design of thick film SOI MOSFET devices.