VLSI金属互连线1/f<sup> γ</sup>噪声指数与电迁移失效

杜 磊; 庄奕琪; 薛丽君

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VLSI金属互连线1/f^γ噪声指数与电迁移失效

论文 | 更新时间：2025-07-16

- VLSI金属互连线1/f^γ噪声指数与电迁移失效
- Correlation between Frequency Exponent of 1/f^γ Noise and Electromigration Failure in VLSI Interconnections
- 电子学报 2003年31卷第2期页码：183-185
- 作者机构：
  
  西安电子科技大学,陕西,西安,710071
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN406
- 纸质出版：2003
- 稿件说明：
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杜磊, 庄奕琪, 薛丽君. VLSI金属互连线1/f^γ噪声指数与电迁移失效[J]. 电子学报, 2003,31(2):183-185.

DU Lei, ZHUANG Yi-qi, XUE Li-jun. Correlation between Frequency Exponent of 1/f^γ Noise and Electromigration Failure in VLSI Interconnections[J]. Acta Electronica Sinica, 2003, 31(2): 183-185.
杜磊, 庄奕琪, 薛丽君. VLSI金属互连线1/f^γ噪声指数与电迁移失效[J]. 电子学报, 2003,31(2):183-185. DOI：

DU Lei, ZHUANG Yi-qi, XUE Li-jun. Correlation between Frequency Exponent of 1/f^γ Noise and Electromigration Failure in VLSI Interconnections[J]. Acta Electronica Sinica, 2003, 31(2): 183-185. DOI：

摘要

对VLSI的金属互连线实施高应力下的加速寿命试验和常规应力下的噪声频谱测量

得到了金属薄膜1/

噪声的频率指数γ在电迁移演化过程中的变化规律

发现γ指数在寿命试验的某个时间点发生突变

从1.0上升到1.6以上.这种突变可以归因于电迁移诱发空洞形成过程的起点

因而是金属薄膜结构开始发生不可逆结构变化的标志.1/ f

噪声指数因子可望成为金属薄膜电迁移损伤程度或寿命的一个表征参量.

Abstract

The accelerated-life tests with high stresses and noise spectrum measurement at normal bias conditions are performed for Al-based interconnection in VLSI

and the variation of frequency exponent

of 1/

noise with the electromigration evolution during the test is observed.It is found that the abrupt change of the exponent γ

from 1.0 to 1.6 above

occurs after a period of the test.The change may be caused by the voids induced by electromigration

and hence the invertible structure variation in the metal thin films starts to be formed at the time.Therefore

the exponent

of 1/

noise can be used as an indicator to evaluate the destruction to thin film interconnection induced by electromigration.

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VLSI金属互连线1/f γ噪声指数与电迁移失效

Correlation between Frequency Exponent of 1/f γ Noise and Electromigration Failure in VLSI Interconnections

DOI：

摘要

Abstract

关键词

Keywords

references

VLSI金属互连线1/f^γ噪声指数与电迁移失效

Correlation between Frequency Exponent of 1/f^γ Noise and Electromigration Failure in VLSI Interconnections