1. 同济大学,上海,200092
2. 华南理工大学,广东,广州,510030
3. 北京格兰特膜分离设备有限公司,北京,100103
4. 同济大学上海,200092
5. 华南理工大学广东广州,510030
6. 北京格兰特膜分离设备有限公司北京,100103
纸质出版:2003
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闻瑞梅, 徐志彪, 孟广祯, 等. MOVPE生产用高纯水中硅的去除[J]. 电子学报, 2003,31(5):721-723.
WEN Rui-Mei, XU Zhi-biao, MENG Guang-zhen, et al. Silica Removal from Purified Water Produced for MOVPE Process[J]. Acta Electronica Sinica, 2003, 31(5): 721-723.
本文介绍了硅对砷化镓材料生长及有机金属化合物气相淀积(MOVPE)工艺中的影响和电脱盐(EDI)技术以及用EDI降低高纯水中硅浓度的机理和方法
通过大量实验比较不同制水设备脱硅效果
得出用EDI技术严格控制pH(8~11)时脱硅效果最好
能使高纯水中Si的浓度<0.5μg/L
满足了MO源生产及MOVPE工艺用水中Si浓度3μg/L的需要.
Silica impurity in the high-purity water that is used for MOVPE(Metallorganic Vapor Phase Epitaxy) processes affects the quality of GaAs material dramatically.The principles and methods of EDI(Electrodeionizaion) to remove silica from high-purity water are introduced.Based on comparison of the efficiencies of silicon removal experiment by using various water fabrication equipments
it was determined that in order to obtain the best silicon removal efficiency the pH values should be controlled between 8.5 to 11.The silicon concentration in high-purity water could be decreased to below 0.5μg/L which satisfied the requirement needed for the fabrication of metallorganic sources and MOVPE process.
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