Pressure sensor for high temperature is very useful for various area applications.Some special materials such as SIC

SOI can be used to manufacture high temperature pressure sensor

but due to the difficult process or/and cost

they are not used widely.In this paper

a novel poly-silicon pressure sensor is designed

further more a CMOS fully depleted integrated circuit is used to change output signal into 0~+5V industrial signal.After simulation and process experiments

the optimized condition of poly-silicon diffusion concentration was found

and the temperature coefficient is reduced to nearly zero between -40℃~180℃.