SHI Yan-ling, QING Jian, LI Wei, et al. MEMS Distributed Phase Shifter on High-Resistivity Silicon with Low Pull-Down Voltage[J]. Acta Electronica Sinica, 2003, 31(12): 1914-1916.
SHI Yan-ling, QING Jian, LI Wei, et al. MEMS Distributed Phase Shifter on High-Resistivity Silicon with Low Pull-Down Voltage[J]. Acta Electronica Sinica, 2003, 31(12): 1914-1916.DOI：
The distributed phase shifters consist of a coplanar waveguide transmission line loaded periodically with MEMS capacitors
which provide variable phase shift through voltage-control of the MEMS capacitors.In this paper
the requirements of the unloaded-line impedance and pull-down voltage for the phase shifter are discussed.To improve the performance in transmission loss
the varieties of the line section where the MEMS capacitor is loaded are analyzed and calculated.The Ka-band distributed MEMS phase shifters are fabricated on the high-resistivity silicon substrate by using optimum parameters.The measured results demonstrate a low actuation voltage
producing an obvious phase shift at 8V bias
and a pull-down voltage never more than 25V.Here
a phase shift of 286°at 36 GHz is achieved.Lifetimes of 3x10
6
cycles have been
obtained for all elastic membranes as far as the phase shifter composed of 16 MEMS bridges is concerned.These offer an important guarantee for practical application of the devices.
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