1. 东南大学微电子中心,江苏,南京,210096
2. 南京电子器件研究所,江苏,南京,210016
3. 东南大学微电子中心江苏南京,210096
4. 南京电子器件研究所江苏南京,210016
纸质出版:2004
移动端阅览
彭龙新, 林金庭, 魏同立. 宽带单片低噪声放大器[J]. 电子学报, 2004,32(11):1933-1937.
PENG Long-xin, LIN Jin-ting, WEI Tong-li. Broad-Band Monolithic Integrated Low Noise Amplifier[J]. Acta Electronica Sinica, 2004, 32(11): 1933-1937.
由电路和噪声基本定义出发
导出了二端口网络的噪声相关矩阵的转移表示式和导纳表示式.并推导了两个二端口网络的级联和并联后的噪声相关矩阵.然后在此基础上得出了并联反馈放大器的噪声参数(
R
n
NF
min
和
Y
opt
)和其
S
参数表达式.由此设计和制造了1~7GHz两级单片低噪声放大器.在工作频率1~7GHz内
测得增益
G
>20dB
带内增益波动Δ
G
≤±0.75dB
噪声系数
NF
≤2.5dB
输入输出驻波
VSWR
≤2.0
1分贝压缩点输出功率
P
1dB
≥15dBm.测试结果验证了设计的正确性.
The noise correlation matrixes of cascade representation
impedance representation and conductance representation of a two-port network were derived from basic circuit and noise definitions.The noise correlation matrixes of two linked two-port networks were also gotten from basic definitions.Then the noise parameters and
S
parameters of a parallel feedback low noise amplifier were derived using these correlation matrixes.A 1~7 GHz two-stage MMIC LNA was designed on the basis of above formulas and fabricated using 0.5μm GaAs PHEMT processes.After measurement
it is found that from frequency 1.0 GHz to 7.0 GHz
the LNA achieves a power gain of 20 dB as well as a good flatness of only ±0.75 dB
a maximum noise figure of 2.5 dB
input and output VSWRs of better than
2.0 and the output
P
1dB
power of 15 dBm.The design is verified by the measurement results of the MMIC LNA.
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