Original SOI FinFET was considered as the best candidate among various non-classic MOS structures.This paper firstly built a FinFET structure on normal bulk-Si substrate by a reasonable design.The SCE of FinFET fabricated on the non-insulating substrate was suppressed greatly for the existing of a grooved planar device by parallel connection.In addition

this new structure provided more process space than original SOI FinFET.The devices

which were fabricated with a standard CMOS process

showed a good performance and were integrated into a small-scale circuit successfully.The results demonstrated that bulk-Si FinFET was a good solution for future VLSI.