Based on a recent band structure calculation

the electron transport properties in Nitrogen-doped 4H-SiC were investigated by an ensemble Monte Carlo technique with a single nonparabolic band model.The results show that at lower doping concentration

neutral impurity scattering has little influence on the electron mobility perpendicular to the principal c axis.With increasing doping concentration

the impact of neutral impurity scattering becomes more significant.However the contribution of neutral impurity scattering to the total mobility is becoming smaller with increasing temperature at higher doping concentration.4H-SiC has a higher electron mobility with much less pronounced anisotropy.At 296K

the saturation velocity for transport perpendicular to the c ax

is given by the model is 2.18×10

7

cm/s.The peak transient velocity at high step electric field such as 1000KV/cm is 3.3×10

7

cm/s when the electric field E is applied perpendicular to the c axis.The response time is only in deep subpicoseconds.The simulation results are in excellent agreement with physical measurements.