Display Driving Circuits Made with MIUC Poly-Si TFTs on Glass Substrate ( 1.Institute of Photo-Electronics,School of Information Technology,Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology Key Laboratory of Opto-Electronic Information Science and Technology ,Ministry of Education,Tianjin 300071,China; 2.Department of Electrical and Electronic Engineering,The Hong Kong University of Science & Technology,Clear Water Bay,Kowloon,Hong Kong,China)
WU Chun-ya, MENG Zhi-guo, LI Juan, et al. Display Driving Circuits Made with MIUC Poly-Si TFTs on Glass Substrate ( 1.Institute of Photo-Electronics,School of Information Technology,Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology Key Laboratory of Opto-Electronic Information Science and Technology ,Ministry of Education,Tianjin 300071,China; 2.Department of Electrical and Electronic Engineering,The Hong Kong University of Science & Technology,Clear Water Bay,Kowloon,Hong Kong,China)[J]. Acta Electronica Sinica, 2005, 33(8): 1349-1352.
WU Chun-ya, MENG Zhi-guo, LI Juan, et al. Display Driving Circuits Made with MIUC Poly-Si TFTs on Glass Substrate ( 1.Institute of Photo-Electronics,School of Information Technology,Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology Key Laboratory of Opto-Electronic Information Science and Technology ,Ministry of Education,Tianjin 300071,China; 2.Department of Electrical and Electronic Engineering,The Hong Kong University of Science & Technology,Clear Water Bay,Kowloon,Hong Kong,China)[J]. Acta Electronica Sinica, 2005, 33(8): 1349-1352.DOI:
Based on metal induced unilateral crystallization (MIUC) technology
poly-Si thin film transistor (poly-Si TFT) display scan driving circuit and data driving circuit for AM-LCD and AM-OLED were developed
which can be made with the fabrication processes compactable with poly-Si TFT active matrix.The scan driver can work within the driving voltage from 3.5V through 10V.When it works at the driving voltage of 5V and the loading capacity of 22pf
the fall time and the rise time of the scanning circuit is about 150ns and 205ns respectively
the maximum working frequency is higher than 1MHz.Meanwhile
the data driving circuit can work within the voltage from 3.5V through 8V.Its rise time is about 200ns
its signal degradation ratio is about 15% during a period of 64μs
and the corresponding maximum working frequency is about 4MHz
when the data driving circuit work at the biased voltage of 5V and the loading capacity of 22pf.Using those MIUC poly-Si TFT display drivers
a self scanned active matrix LCD with pixel number of 80×RGB×60 was demonstrated.