南京电子器件研究所,江苏,南京,210016
纸质出版:2006
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彭龙新, 杨乃彬, 林金庭. 宽带单片低噪声放大器的增益温度补偿[J]. 电子学报, 2006,34(5):934-937.
PENG Long-xin, YANG Nai-bin, LIN Jin-ting. The Temperature Compensation for MMIC Broadband Amplifier Gain[J]. Acta Electronica Sinica, 2006, 34(5): 934-937.
分析了PHEMT的增益-温度特性和漏电流-温度特性
发现PHEMT增益和漏电流都是随温度的升高而降低
并发现了一定栅宽的PHEMT在大于某一频率时
其增益受温度变化较小的原因.提出了两种自动温度补偿的方法
并分析了每种方法的温度补偿原理.串联源电阻的温度补偿可使PHEMT的漏电流基本保持不变
在一定程度上能降低温度对增益的影响.而自动栅压温度补偿则是强温度补偿
它可随温度的升高
自动提高栅极电压
提高PHEMT的跨导
从而大大减少温度对增益的影响
达到温度补偿的目的.把这两种自动温度补偿的方法结合应用到宽带低噪声放大器中
发现补偿效果良好.试验发现温度补偿后
温度从-55℃~+85℃时和-55℃~+125℃时
放大器的增益在6GHz时的降差分别减小了60%和51%
较大地改善了放大器的温度-增益性能.
The dependence of PHEMT's drain current and gain on temperature were analyzed.It was found that the current and gain decreased with temperature increase.Two methods were presented for automatically compensating the temperature dependence and their principals were analyzed.A series source resistor could keep the PHEMT's drain nearly unchangeable and decrease the temperature effect on the amplifier gain to some content.However
the automatic gate voltage temperature compensation was a strong compensation.It increased the gate voltages and PHEMT's transconductance with the temperature increase
thus greatly decreased the temperature effect on the gain.The two methods were then combined and applied to a broadband low noise amplifier.Good experimental results were obtained.When the temperature increased from -55℃ to +85℃ and from -55℃ to +125℃
the amplifier gain drop decreased by 60% and 51% at 6 GHz
respectively
which greatly improved the gain-temperature feature of the amplifier.
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