This paper presents the benchmark test results on various surface potential based charge-sheet models.Compared with the Pao-Sah model

most charge-sheet models predict the inversion charge with different degree errors in different operation regions.In order to model the MOSFET channel current

a semi-empirical channel current equation has to be used in the present surface potential based charge-sheet models

that lead to device physics inconsistency between the channel current expression and channel charge equation

thus result in some channel current errors.These benchmark test results demonstrated that the charge sheet models require some fundamental improvements to maintain the inherent device physics and high accuracy of the Pao-Sah model.