A dual-material-gate single-halo SOI MOSFET was proposed to suppress the short channel effect and increase the current driving capacity of deep submicron SOI MOSFETs.The gate consists of two materials contacting laterally and with different work functions

and halo doping is used in the channel near the source.Using the multi-region parabola potential distribution and the universal boundary conditions

the two-dimensional analytical models of surface potential and threshold voltage for the novel device were derived by solving the two-dimensional Poisson's equation under the fully depleted condition.The characteristics of the novel device were studied as compared with the conventional SOI MOSFET.It was shown that the novel device could suppress threshold voltage roll-off

hot carrier and drain-induced barrier lowering effects efficiently

and increase carrier transport speed through the channel considerably.The analytical models are in very good agreement with two-dimensional device simulator MEDICI.