A novel lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) structure

using an effective concept of dual Polysilicon material gate

is proposed.The conventional polysilicon gate applied in LDMOSFET is divided into S-gate and D-gate by gate engineering.The special gate structure can improve driveability

suppress SCEs(short channel effects) and screen DIBL(drain-induced barrier lowering).The threshold voltage model is solved by two dimensional (2D) Poisson’s equation.The difference of workfunction and doping concentration distribution are also taken into account in the surface potential function.The results predicted by the model are compared with those obtained by 2D simulating to verify the accuracy of the proposed analytical model.