In the integrated circuits with frequency above several GHz

parasitic inductive effect has extremely influenced the circuit performance.Therefore

efficient algorithms are required to extract the frequency-dependent parameters which capture the inductive effect.The recently proposed K element (inverse of the partial inductance) has a good localization property

and has been widely accepted for the modeling of parasitic inductance.However

most previous works on reluctance extraction did not take high frequency effect into account and were not efficient enough for 3-D complex structure In this paper

a set of algorithms are proposed to extract the frequency-dependent K element and resistance of 3D interconnects.With a windowing technique

a direct K extraction algorithm

and improvements on solving equations within the window

the proposed method is able to handle complex interconnect structures very efficiently.Compared with FastHenry

the presented method has a speedup ratio from several tens to several hundreds

while preserving good accuracy.