李尊朝, 张瑞智, 张效娟, 等. 基于遗传算法的亚100nm SOI MOSFET模型参数提取[J]. 电子学报, 2007,35(11):2033-2037.
LI Zun-chao, ZHANG Rui-zhi, ZHANG Xiao-juan, et al. Genetic-Algorithm-Based Model Parameter Extraction for Sub-100nm SOI MOSFET[J]. Acta Electronica Sinica, 2007, 35(11): 2033-2037.
李尊朝, 张瑞智, 张效娟, 等. 基于遗传算法的亚100nm SOI MOSFET模型参数提取[J]. 电子学报, 2007,35(11):2033-2037.DOI:
LI Zun-chao, ZHANG Rui-zhi, ZHANG Xiao-juan, et al. Genetic-Algorithm-Based Model Parameter Extraction for Sub-100nm SOI MOSFET[J]. Acta Electronica Sinica, 2007, 35(11): 2033-2037.DOI:
Genetic algorithm is used in BSIMSOI4 model parameter extraction for sub-100nm SOI MOSFETs to simplify extraction process and optimize parameters globally.An extraction algorithm called adaptive genetic algorithm maintaining multi-optimum is proposed.In the new algorithm
multiple copies of the optimum chromosome in each generation are kept
induced and dynamic mutations are carried out on chromosomes with larger and smaller fitness
respectively
and random and induced crossovers are executed in the early and late generations
respectively.The global optimization is maintained
the local searching is speeded up and the quality of the final solution is improved.Extraction examples under different population sizes and evolutionary steps show that the new algorithm has the advantages of higher accuracy
faster convergence
and reliable global optimization and that global convergence could be speeded up by increasing population sizes properly.