HUANG Wei, ZHANG Shu-dan, XU Ju-yan. A Thin Tantalum Interlayer on the Thermal Stability and Electrical of NiSi Film[J]. Acta Electronica Sinica, 2011, 39(11): 2502-2506.
HUANG Wei, ZHANG Shu-dan, XU Ju-yan. A Thin Tantalum Interlayer on the Thermal Stability and Electrical of NiSi Film[J]. Acta Electronica Sinica, 2011, 39(11): 2502-2506.DOI：
A novel method with the property of law was for the first time put forward to improve the thermal stability of NiSi film.According to the way
adding a thin Tantalum interlayer within the nickel film was first reported to effectively improve the thermal stability of nickel monosilicide.After rapid thermal annealing (RTA) at temperatures ranging from 600℃ to 800℃
the sheet resistance of formed Ni(Ta)Si samples was about 2Ω/□
and its value is also lower than that of nickel monosilicide without the interlayer.X-ray diffraction (XRD)
AES
RBS and AFM results both reveal that
NiSi phase exists in these samples
but the high resistance NiSi
2
phase does not exist because tantalum interlayer as the diffusion barrier for oxygen element moved to the top of the thin film after rapid thermal annealing.Fabricated Ni(Ta)Si/Si Schottky barrier diodes with the guard ring structure displayed good quality
with the barrier height being located generally about 0.64 eV and the ideality factor approaching unity.Therefore
It shows that Ni(Ta)Si is a satisfactory local connection and contact material.
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