高可靠性InGaZnO薄膜晶体管集成栅极驱动电路的研究
Study of Highly Reliable Gate Driver on Array Based on InGaZnO Thin Film Transistor
- 电子学报 2022年 页码：1-7
- 作者机构：
1.东南大学电子科学与工程学院，江苏南京210096
2.南京京东方显示技术有限公司研发部，江苏南京210033
- 作者简介：
[ "周刘飞 男，1982年出生，江苏南通人.主要研究方向为新型显示与集成驱动技术. E-mail： zhouliufeia@163.com" ]
[ "陈 旭 男，1983年出生，安徽马鞍山人.主要研究方向为新型显示设计与开发. E-mail： njuptchenxu@sina.cn" ]
[ "王海宏 男，1986年出生，江苏海安人.主要研究方向为新型显示设计与开发. E-mail： wanghaihongscut@163.com" ]
- 基金信息：
DOI：
中图分类号： TN321.5;-
网络出版：2022-11-26，
- 稿件说明：
移动端阅览
周刘飞, 邵贤杰, 陈旭, 等. 高可靠性InGaZnO薄膜晶体管集成栅极驱动电路的研究[J/OL]. 电子学报, 2022,1-7.
ZHOU Liu-fei, SHAO Xian-jie, CHEN Xu, et al. Study of Highly Reliable Gate Driver on Array Based on InGaZnO Thin Film Transistor[J/OL]. ACTA ELECTRONICA SINICA, 2022, 1-7.
摘要
InGaZnO薄膜晶体管（InGaZnO Thin Film Transistor，IGZO TFT）具有高迁移率特性，易实现高分辨率且高刷新率的有源矩阵液晶显示（Liquid Crystal Displays，LCD）. 然而，由于IGZO TFT长期运行后较严重的性能下降，导致集成栅极驱动电路（Gate Driver on Array，GOA）的使用寿命受到限制，这成为IGZO GOA在大尺寸LCD应用的一个关键障碍. 本文提出一种具有双维持模块的高可靠性IGZO GOA电路，适用于大尺寸高分辨率LCD，其中维持电路产生的双极性脉冲偏压可以有效抑制IGZO TFT阈值电压（Threshold Voltage，V
TH
）漂移. 详细分析了该GOA电路的工作原理，并进行了相关电学模拟. 再者，表征了偏压温度应力下的TFT稳定性，以证明双极性脉冲偏压抑制V
TH
漂移的有效性. 采用本文提出的新型GOA电路，制作了55英寸UHD（3840 × 2160）高分辨率LCD，具有5mm窄边框特征，其中GOA电路仅占用1.47mm. 此外，信赖性测试中，该GOA电路在高温高湿（60°C/90%）环境稳定工作1000小时. 这些结果表明本文提出的IGZO GOA电路应用于大尺寸高分辨率LCD具有足够的可靠性.
Abstract
Due to the high mobility of InGaZnO thin-film transistor(IGZO TFT)
the active matrix liquid crystal display(LCD) using IGZO TFT is able to provide high resolution and high frame frequency. However
the lifetime of IGZO gate driver on array(GOA) is limited since the IGZO TFT usually suffers severe performance degradation after a long time operation
which comes to be a critical obstacle for GOA's application in large-sized LCDs. In this paper
a highly reliable IGZO GOA circuit with a dual low-level holding structure is proposed and fabricated for large-sized and high resolution LCD applications
in which bipolar pulse bias(BPB) is generated to suppress the threshold voltage(V
TH
) shift of IGZO TFT. The proposed GOA circuit can be divided into several units for different functions: pull-up control unit
pull up unit
pull down unit
low-level holding unit
and reset unit. The operation principle of the GOA is described in detail
and the related simulation is conducted. Then
bias temperature stress(BTS) measurements are performed to demonstrate the effectiveness of the BPB in suppressing the V
TH
shift. With this GOA
a 55-inch UHD(3840 × 2160) high resolution LCD panel with a 5 mm narrow bezel is achieved
in which the layout dimension of GOA circuit is only 1.47mm. In addition
in a reliability test
the new GOA circuit operates stably at high temperature and high humidity(60°C/90%) for 1000 h. These results can well prove that designed GOA has good enough reliability for large-sized and high resolution LCD.
关键词
Keywords
references
Park J S , Maeng W J , Kim H S , et al . Review of recent developments in amorphous oxide semiconductor thin-film transistor devices [J]. Thin Solid Films , 2012 , 520 ( 6 ): 1679 - 1693 .
Xue Y , Wang L J , Zhang Y , et al . 31-inch 4K flexible display employing gate driver with metal oxide thin-film transistors [J]. IEEE Electron Device Letters , 2021 , 42 ( 2 ): 188 - 191 .
Yamada S , Shimoshikiryoh F , Itoh Y , et al . Development of a 27-in. 8K4K liquid-crystal display utilizing an InGaZnO TFT backplane [J]. SID International Symposium , 2016 , 47 ( 1 ): 480 - 483 .
Park J C , Ahn S E , Lee H N . High-performance low-cost back-channel-etch amorphous gallium-indium-zinc oxide thin-film transistors by curing and passivation of the damaged back channel [J]. ACS Applied Materials Interfaces , 2013 , 5 ( 23 ): 12262 - 12267 .
Zhang J N , Huang W H , Chang K C , et al . Performance enhancement and bending restoration for flexible amorphous indium gallium zinc oxide thin-film transistors by low-temperature supercritical dehydration treatment [J]. ACS Applied Materials & Interfaces , 2021 , 13 ( 7 ): 8584 - 8594 .
Chen T C , Chang T C , Tsai C T , et al . Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress [J]. Applied Physics Letters , 2010 , 97 ( 11 ): 112104 .
Kim J I , Cho I T , Jeong C Y , et al . Local-degradation-induced threshold voltage shift in turned-off amorphous InGaZnO thin film transistors under AC drain bias stress [J]. IEEE Electron Device Letters , 2015 , 36 ( 6 ): 579 - 581 .
Chen T C , Chang T C , Hsieh T Y , et al . Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor [J]. Applied Physics Letters , 2011 , 99 ( 2 ): 022104 .
Jeong C Y , Lee D , Song S H , et al . A study on the degradation mechanism of InGaZnO thin-film transistors under simultaneous gate and drain bias stresses based on the electronic trap characterization [J]. Semiconductor Science and Technology , 2014 , 29 ( 4 ): 045023 .
Xu P R , Yao R H . Threshold-voltage shift model based on electron tunneling under positive gate bias stress for amorphous InGaZnO thin-film transistors [J]. Displays , 2018 , 53 ( 1 ): 14 - 17 .
Takahashi T , Miyanaga R , Fujii M N , et al . Hot carrier effects in InGaZnO thin-film transistor [J]. Applied Physics Express , 2019 , 12 ( 9 ): 094007 .
Lin D , Su W C , Chang T C , et al . Effects of redundant electrode width on stability of a-InGaZnO thin-film transistors under hot-carrier stress [J]. IEEE Transactions on Electron Devices , 2020 , 67 ( 6 ): 2372 - 2375 .
Choi J W , Kim J I , Kim S H , et al . Highly reliable amorphous silicon gate driver using stable center-offset thin-film transistors [J]. IEEE Transactions on Electron Devices , 2010 , 57 ( 9 ): 2330 - 2334 .
Ahn S J , Hong S K , Kwon O K . A low-power scan driver using depletion-mode a-IGZO TFTs for high-resolution displays [J]. SID International Symposium , 2014 , 45 ( 3 ): 1009 - 1012 .
Jeong H , Choi B K , Chung H J , et al . Long life-time amorphous-InGaZnO TFT-based shift register using a reset clock signal [J]. IEEE Electron Device Letters , 2014 , 35 ( 8 ): 844 - 846 .
Kim J H , Oh J S , Park K C , et al . IGZO TFT gate driver circuit with large threshold voltage margin [J]. Displays , 2018 , 53 : 1 - 7 .
Kim B , Cho H N , Choi W S , et al . A novel depletion-mode a-IGZO TFT shift register with a node-shared structure [J]. IEEE Electron Device Letters , 2012 , 33 ( 7 ): 1003 - 1005 .
Seo J , Song S J , Kim D , et al . Robust low power DC-type shift register circuit capable of compensating threshold voltage shift of oxide TFTs [J]. Displays , 2017 , 49 : 65 - 71 .
Shin H J , Takasugi S , Choi W S , et al . A novel OLED display panel with high-reliability integrated gate driver circuit using IGZO TFTs for large-sized UHD TVs [J]. SID International Symposium , 2018 , 49 ( 1 ): 358 - 361 .
Lin C L , Cheng M H , Yu C D , et al . Highly Reliable Integrated Gate Driver Circuit for Large TFT-LCD Applications [J]. IEEE Electron Device Letters , 2012 , 33 ( 5 ): 679 - 681 .
Lin C L , Cheng M H , Tu C D , et al . 2D-3D switchable gate driver circuit for TFT-LCD applications [J]. IEEE Transactions on Electron Devices , 2014 , 61 ( 6 ): 2098 - 2105 .
Hu Z J , Liao C W , Li J M , et al . A-Si:H TFT gate driver with shared dual pull-down units for large-sized TFT-LCD applications [J]. SID International Symposium , 2014 , 45 ( 3 ): 986 - 989 .
Lee J M , Cho I T , Lee J H , et al . Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors [J]. Applied Physics Letters , 2008 , 93 ( 9 ): 093504 .
Qian H M , Yu G , Lu Hai , et al . Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistor [J]. Chinese Physics B , 2015 , 24 ( 7 ): 077307 .
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