LIU An sheng 1, SHAO Bei ling 1, AN Sheng 1, et al. Study on Microstructure of Si0.65Ge0.35 /p Si Infrared Detector with a Stacked Structure[J]. Acta Electronica Sinica, 1999, (11).
LIU An sheng 1, SHAO Bei ling 1, AN Sheng 1, et al. Study on Microstructure of Si0.65Ge0.35 /p Si Infrared Detector with a Stacked Structure[J]. Acta Electronica Sinica, 1999, (11).DOI：
Microstructure of P + Si 0 65 Ge 0 35 /p Si heterojunction internal photoemission （HIP） infrared detector has been observed by using localization cross section transmission electron microscopy.The photo sensitive area in the detector consists of 6 P + Si 0 65 Ge 0 35 layers and 5 UD Si layers
which are smooth and have thickness of 6nm and 32nm
respectively.A stress field exists on the interface between Si 0 65 Ge 0 35 and UD Si layers
but the crystal defects have not been found in this area.Both Si 0 65 Ge 0 35 and UD Si layers on amorphous SiO 2 step consist of polycrystals and are in the shape of waves.There are defect regions in the edger of photo sensitive area.The region is less than 120nm in width.The crystal defects are stacking faults and microtwins.
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